au.\*:("ONGA S")
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ELASTORESISTANCE-COEFFICIENT MEASUREMENTS OF P-TYPE SILICON ON SAPPHIREONGA S; KO WH; OHMURA Y et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7240-7242; BIBL. 10 REF.Article
ELECTRICAL CHARACTERISTICS OF DEPLETRIN-TYPE SOS MOS DEVICESONGA S; KO WH; HATANAKA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1675-1682; BIBL. 12 REF.Article
INFLUENCE OF CRYSTALLINE DEFECTS AND RESIDUAL STRESS ON THE ELECTRICAL CHARACTERISTICS OF SOS MOS DEVICES.ONGA S; HATANAKA K; KAWAJI S et al.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; NO 2; PP. 413-422; BIBL. 14 REF.Article
EFFECTS OF CRYSTALLINE DEFECTS ON ELECTRICAL PROPERTIES IN SILICON FILMS ON SAPPHIRE.ONGA S; YOSHII T; HATANAKA K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 225-231; BIBL. 12 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper
CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS TRANSISTORS AND ITS FILM PROPERTIES. IONGA S; MIZUTANI Y; TANIGUCHI K et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1472-1478; BIBL. 16 REF.Article
A supervised simulation system for process and device designs based on a geometrical data interfaceKATO, K; SHIGYO, N; WADA, T et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 10, pp 2049-2058, issn 0018-9383Article